LS840 [Linear Systems]
LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET; 低噪声，低漂移低电容单片双N沟道JFET
| 型号： | LS840 |
| 厂家： | 
Linear Systems |
| 描述： | LOW NOISE LOW DRIFT LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET |
| 文件： | 总2页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS840 LS841 LS842
LOW NOISE LOW DRIFT
LOW CAPACITANCE
MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated Systems
FEATURES
LOW NOISE
en= 8nV/√Hz TYP.
LOW LEAKAGE
LOW DRIFT
IG = 10pA TYP.
|∆VGS1-2 /∆T|= 5µV/°C max.
IVGS1-2I= 2mV TYP.
LOW OFFSET VOLTAGE
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
G1
S2
3
1
5
7
D1
G1
S2
-65° to +150°C
+150°C
S1
G2
D2
D1 2
6 D2
Maximum Voltage and Current for Each Transistor NOTE 1
-VGSS
-VDSO
-IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
60V
S1
G2
60V
50mA
31 X 32 MILS
BOTTOM VIEW
Maximum Power Dissipation
Device Dissipation @ Free Air - Total
400mW @ +125°C
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS LS840 LS841 LS842 UNITS
|∆VGS1-2 /∆T| max. Drift vs. Temperature
CONDITIONS
5
5
10
10
40
25
µV/°C
VDG= 20V
ID= 200µA
ID= 200µA
TA= -55°C to +125°C
VDG= 20V
|VGS1-2| max.
Offset Voltage
mV
SYMBOL
BVGSS
CHARACTERISTICS
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
60
TYP.
--
MAX. UNITS
CONDITIONS
--
--
V
V
VDS= 0
ID= 1nA
ID= 0
BVGGO
60
--
IG= 1nA
IS= 0
Yfss
1000
500
--
4000
1000
3
µmho
µmho
%
VDG= 20V VGS= 0
f= 1kHz
Yfs
Typical Conduction
Mismatch
VDG= 20V ID= 200µA
|Yfs1-2/Yfs|
0.6
DRAIN CURRENT
Full Conduction
IDSS
0.5
2
1
5
5
mA
%
VDG= 20V VGS= 0
|IDSS1-2/IDSS
|
Mismatch at Full Conduction --
GATE VOLTAGE
V
GS(off) or VP
Pinchoff Voltage
Operating Range
GATE CURRENT
Operating
1
2
4.5
4
V
V
VDS= 20V ID= 1nA
VGS
0.5
--
VDS= 20V ID= 200µA
-IG
--
--
--
--
10
--
50
50
--
pA
nA
pA
pA
VDG= 20V ID= 200µA
VDG= 20V ID= 200µA
VDG= 10V ID= 200µA
VDG= 20V VDS= 0
-IG
High Temperature
Reduced VDG
TA= +125°C
-IG
5
-IGSS
At Full Conduction
--
100
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
OUTPUT CONDUCTANCE
YOSS
YOS
Full Conduction
Operating
--
--
--
--
10
1
µmho
µmho
µmho
VDG= 20V
VDG= 20V
VGS= 0
0.1
0.01
ID= 200µA
|YOS1-2
|
Differential
0.1
COMMON MODE REJECTION
CMR
CMR
-20 log |∆VGS1-2/∆VDS
|
--
--
100
75
--
--
dB
dB
∆VDS= 10 to 20V
∆VDS= 5 to 10V
ID= 200µA
ID= 200µA
NOISE
NF
en
en
Figure
--
--
--
--
--
--
0.5
10
15
dB
VDS= 20V
f= 100Hz
VGS= 0 RG= 10MΩ
NBW= 6Hz
Voltage
Voltage
nV/√Hz VDS= 20V
NBW= 1Hz
ID= 200µA f= 1KHz
nV/√Hz VDS= 20V
NBW= 1Hz
ID= 200µA f= 10Hz
CAPACITANCE
Input
CISS
CRSS
CDD
--
--
--
4
10
5
pF
pF
pF
VDS= 20V
VDG= 20V
ID= 200µA
ID= 200µA
Reverse Transfer
Drain-to-Drain
1.2
0.1
--
P-DIP
TO-71
Six Lead
0.230
TO-78
(8.13)
(7.37)
0.320
0.290
0.335
0.370
DIA.
0.195
0.175
0.209
0.305
0.335
DIA.
S1 1
G2
SS
8
7
0.405
(10.29)
MAX.
MAX.
0.030
MAX.
0.150
0.115
0.165
0.185
0.040
D1 2
SS 3
G1 4
0.016
0.019
DIM. A
6 D2
5 S2
MIN. 0.500
6 LEADS
0.019
0.016
0.500 MIN.
0.050
0.016
0.021
DIM. B
SEATING
PLANE
DIA.
0.200
0.100
0.100
0.029
0.045
SOIC
3
7
3
7
2
1
8
4
5
6
2
4
0.150 (3.81)
0.158 (4.01)
1
8
5
6
0.100
S1 1
D1 2
SS
G1 4
8
7
6
5
G2
SS
D2
S2
45°
45°
0.188
0.197
(4.78)
(5.00)
3
0.046
0.036
0.048
0.028
0.028
0.034
(5.79)
0.228
(6.20)
0.244
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired.
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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